Diffusion in Semiconductor Technology
نویسندگان
چکیده
The paper deals with the analysis of pair di usion models in semiconductor technology. The underlying model contains reaction-drift-di usion equations for the mobile point defects and dopant-defect pairs as well as reaction equations for immobile dopants which are coupled with a nonlinear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an existence and uniqueness result for strong solutions. Starting with energy estimates we derive further a priori estimates such that xed point arguments due to Leray-Schauder guarantee the solvability of the model equations.
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